SemiSerious

Die Photos showing Advanced Process Lithographies (click to enlarge) 

Analyzing devices has become increasingly difficult over the past years with the advancement of technology.  Previously, anyone with some tools and know-how could take a semiconductor device, rip it apart, and find out some technical details about it.  Two decades ago, feature sizes were measured in microns and an advanced process was 5um.  Today, advanced devices are pushing 50nm, a 100x improvement.  Optical analysis is no longer a feasible solution, as the tools, such as a microscope, would need to be conisderable better than one would typically have in a garage or personal lab.
 
SI has taken steps to be able to keep ahead of the technology curve in the semiconductor industry, and have successfully analyzed advanced integrated circuits in 70, 65, and 50nm lithographies from Toshiba, Samsung, and IM Flash Technologies, respectively.  This has required, and continues to require, a sizable investment of time and resources into pioneering new techniques for sample preparation, imaging, and circuit extraction to be able to handle the most advanced devices.  For our effort, SI has been awarded 6 US patents to date, with several more pending.

While companies understand the technology they utilize, SI has analyzed their technology, and that of all of their competitors.  With thousands of completed analyses, SI is in a unique position to identify, understand, and comment on innovations in the industry.

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